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Sensitive area: 2.0 * 1.0mm2 element substrate material Silicon substrate thickness: 0.5mm Operating wavelength: 7~14um Average transmittance: > 75% Output signal: >2.5V (420'k blackbody£¬ 1Hz modulation frequency£¬ 0.3~3.0Hz bandwidth£¬ 72.5db gain) Noise: <200mV (mVp-p) (25'c) Balance of u003c: < 20% Operating voltage: 2.2~15V Working current: 8.5~24uA (VD = 10V£¬ Rs = 47kohm£¬ 25'C) Source voltage: 0.4~1.1V (VD = 10V£¬ Rs = 47kohm£¬ 25'C) Operating temperature: -20~+70'C Storage temperature: -35~+80'C Field: 139' * 126' Use 1. The above specifications are measured based on the source resistor R2 = 47Kohm; When the user uses the sensor£¬ he / she can adjust R2 size according to needs. 2£¬ Note the location of the sensing element and the field size £¬ in order to get the best optical design. 3£¬ All voltage valves are measured based on peak to peak calibration. EA and EB in balance respectively sense peak to peak voltage output signal. 4£¬ When using the sensor£¬ the pins bending or welding parts should get away from the base for more than 4mm. 5£¬ Before using the sensor£¬ you should refer to the picture to prevent a wrong pin.